Semiconductor Theory Mcqs – (Electrical Engineering) MCQs Latest For FPSC, PPSC, NTS, KPPSC, SPSC & Other Tests
“ Semiconductor Theory Mcqs“. Tab this page to check “Latest Semiconductor Theory Mcqs “ for the preparation of competitive mcqs, FPSC mcqs, PPSC mcqs, SPSC mcqs, KPPSC mcqs, AJKPSC mcqs, BPSC mcqs, NTS mcqs, PTS mcqs, OTS mcqs, Atomic Energy mcqs, Pak Army mcqs, Pak Navy mcqs, CTS mcqs, ETEA mcqs and others. The most occurred mcqs of Semiconductor Theory in past papers. Past papers of Semiconductor Theory Mcqs. Past papers of Semiconductor Theory Mcqs. Mcqs are the necessary part of any competitive / job related exams. The Semiconductor Theory Mcqs having specific numbers in any written test. It is therefore everyone have to learn / remember the related Semiconductor Theory Mcqs. The Important series of Semiconductor Theory Mcqs are given below:
At absolute temperature, an intrinsic semiconductor has________________?
A. Many holes
B. A few free electrons
C. Many free electrons
D. No holes or free electrons
A reverse biased pn junction has resistance of the order of________________?
A. kO
B. O
C. MO
D. None of the above
A reverse bias pn junction has_____________?
A. Very low resistance
B. Almost no current
C. Very narrow depletion layer
D. Large current flow
The barrier voltage at a pn junction for germanium is about________________?
A. 3 V
B. 5 V
C. Zero
D. 0.3 V
The random motion of holes and free electrons due to thermal agitation is called______________?
A. Diffusion
B. Ionisation
C. Pressure
D. None of the above
A hole and electron in close proximity would tend to________________?
A. Have no effect on each other
B. Attract each other
C. Repel each other
D. None of the above
The battery connections required to forward bias a pn junction are_________________?
A. +ve terminal to p and –ve terminal to n
B. -ve terminal to p and –ve terminal to n
C. -ve terminal to p and +ve terminal to n
D. None of the above
In the depletion region of a pn junction, there is a shortage of_________________?
A. Donor ions
B. Holes and electrons
C. Acceptor ions
D. None of the above
A pn junction acts as a__________________?
A. Bidirectional switch
B. Controlled switch
C. Unidirectional switch
D. None of the above
In an intrinsic semiconductor, the number of free electrons_____________?
A. Equals the number of holes
B. Is less than the number of holes
C. Is greater than the number of holes
D. None of the above
When the temperature of an extrinsic semiconductor is increased, the pronounced effect is on_________________?
A. Majority carriers
B. Minority carriers
C. Junction capacitance
D. None of the above
The leakage current in a pn junction is of the order of________________?
A. mA
B. Aa
C. kA
D. µA
The leakage current across a pn junction is due to________________?
A. Minority carriers
B. Junction capacitance
C. Majority carriers
D. None of the above
With forward bias to a pn junction , the width of depletion layer__________________?
A. Decreases
B. Remains the same
C. Increases
D. None of the above
At room temperature, an intrinsic semiconductor has_______________?
A. Many free electrons only
B. A few free electrons and holes
C. Many holes only
D. No holes or free electrons
At room temperature, an intrinsic silicon crystal acts approximately as_______________?
A. A conductor
B. A battery
C. An insulator
D. A piece of copper wire
A forward biased pn junction diode has a resistance of the order of_____________?
A. O
B. MO
C. kO
D. None of the above
In a semiconductor, current conduction is due to________________?
A. Only free electrons
B. Only holes
C. Holes and free electrons
D. None of the above
The impurity level in an extrinsic semiconductor is about_______________of pure semiconductor ?
A. 1 atom for 104 atoms
B. 1 atom for 108 atoms
C. 10 atoms for 108 atoms
D. 1 atom for 100 atoms
The resistivity of pure germanium under standard conditions is about_______________?
A. 3 x 106 cm
B. 60 x cm
C. 6 x 104 cm
D. 6 x 10-4 cm
The most commonly used semiconductor is________________?
A. Carbon
B. Silicon
C. Germanium
D. Sulphur
A pentavalent impurity has______________Valence electrons?
A. 4
B. 5
C. 3
D. 6
Addition of trivalent impurity to a semiconductor creates many_______________?
A. Holes
B. Valence electrons
C. Free electrons
D. Bound electrons
As the doping to a pure semiconductor increases, the bulk resistance of the semiconductor_______________?
A. Increases
B. Remains the same
C. Decreases
D. None of the above
A hole in a semiconductor is defined as_________________?
A. A free proton
B. The incomplete part of an electron pair bond
C. A free electron
D. A free neutron
A trivalent impurity has______________valence electrons?
A. 5
B. 4
C. 6
D. 3
The strength of a semiconductor crystal comes from______________?
A. Forces between protons
B. Forces between nuclei
C. Electron-pair bonds
D. None of the above
A semiconductor is formed by ______________bonds?
A. Covalent
B. Co-ordinate
C. Electrovalent
D. None of the above
The resistivity of a pure silicon is about _______________?
A. 3 x 105 O m
B. 6000 O cm
C. 100 O cm
D. 6 x 10-8 O cm
When a pentavalent impurity is added to a pure semiconductor, it becomes________________?
A. An intrinsic semiconductor
B. An insulator
C. p-type semiconductor
D. n-type semiconductor
An n-type semiconductor is______________?
A. Negatively charged
B. Positively charged
C. Electrically neutral
D. None of the above
Addition of pentavalent impurity to a semiconductor creates many________________?
A. Free electrons
B. Valence electrons
C. Holes
D. Bound electrons
When a pure semiconductor is heated, its resistance_________________?
A. Remains the same
B. Goes down
C. Goes up
D. Can’t say
A semiconductor has generally_______________valence electrons?
A. 3
B. 2
C. 6
D. 4
A semiconductor has ______________ temperature coefficient of resistance?
A. Zero
B. Positive
C. Negative
D. None of the above