Transistor Biasing Mcqs – (Electrical Engineering) MCQs Latest For FPSC, PPSC, NTS, KPPSC, SPSC & Other Tests

Transistor Biasing Mcqs – (Electrical Engineering) MCQs Latest For FPSC, PPSC, NTS, KPPSC, SPSC & Other Tests

Transistor Biasing Mcqs - (Electrical Engineering) MCQs Latest For FPSC, PPSC, NTS, KPPSC, SPSC & Other Tests
Transistor Biasing Mcqs

Transistor Biasing Mcqs“. Tab this page to check “Latest Transistor Biasing Mcqs for the preparation of competitive mcqs, FPSC mcqs, PPSC mcqs, SPSC mcqs, KPPSC mcqs, AJKPSC mcqs, BPSC mcqs, NTS mcqs, PTS mcqs, OTS mcqs, Atomic Energy mcqs, Pak Army mcqs, Pak Navy mcqs, CTS mcqs, ETEA mcqs and others. The most occurred mcqs of Transistor Biasing in past papers. Past papers of Transistor Biasing Mcqs. Past papers of Transistor Biasing Mcqs. Mcqs are the necessary part of any competitive / job related exams. The Transistor Biasing Mcqs having specific numbers in any written test. It is therefore everyone have to learn / remember the related Transistor Biasing Mcqs. The Important series of Transistor Biasing Mcqs are given below:

In the above question (Q38.) , what is the collector voltage ?

A. 3 V
B. 6 V
C. 8 V
D. 7 V

The purpose of resistance in the emitter circuit of a transistor amplifier is to _________________?

A. Provide base-emitter bias
B. Limit the maximum emitter current
C. Limit the change in emitter current
D. None of the above

The base resistor method is generally used in ________________?

A. Rectifier circuits
B. Switching circuits
C. Amplifier circuits
D. None of the above

In a base resistor method, if the value of ß changes by 50, then collector current will change by a factor ___________________?

A. 100
B. 50
C. 25
D. 200

If the value of collector current IC increases, then the value of VCE ______________?

A. Increases
B. Decreases
C. Remains the same
D. None of the above

In a particular biasing circuit, the value of RE is about _________________?

A. 1 MO
B. 10 kO
C. 100 kO
D. 800 O

The value of VBE ___________________?

A. Is strongly dependant on IC
B. Is almost independent of IC
C. Depends upon IC to moderate extent
D. None of the above

A silicon transistor is biased with base resistor method. If ß=100, VBE =0.7 V, zero signal collector current IC = 1 mA and VCC = 6V , what is the value of the base resistor RB ?

A. 315 kO
B. 530 kO
C. 105 kO
D. None of the above

When the temperature changes, the operating point is shifted due to _______________?

A. Change in ICBO
B. Change in the values of circuit resistance
C. Change in VCC
D. None of the above

The stabilisation of operating point in potential divider method is provided by_______________?

A. RE consideration
B. VCC consideration
C. RC consideration
D. None of the above

In the design of a biasing circuit, the value of collector load RC is determined by__________________?

A. VCE consideration
B. IB consideration
C. VBE consideration
D. None of the above

For germanium transistor amplifier, VCE should_______________for faithful amplification?

A. Be 0.2 V
B. Be zero
C. Not fall below 0.7 V
D. None of the above

In a transistor amplifier circuit VCE = VCB +________________?

A. VBE
B. 5VBE
C. 2VBE
D. None of the above

The stability factor of a collector feedback bias circuit is_______________ that of base resistor bias?

A. More than
B. The same as
C. Less than
D. None of the above

If the temperature increases, the value of VCE_________________?

A. Is increased
B. Remains the same
C. Is decreased
D. None of the above

The value of stability factor for a base resistor bias is________________?

A. (ß+1)RC
B. RB (ß+1)
C. (ß+1)
D. 1-ß

In voltage divider bias, VCC = 25 V; R1 = 10 kO; R2 = 2.2 V ; RC = 3.6 V and RE =1 kO. What is the emitter voltage?

A. 3 V
B. 7 V
C. V
D. 8 V

In voltage divider bias, operating point is 3 V, 2 mA. If VCC = 9 V, RC = 2.2 kO, what is the value of RE ?

A. 1400 O
B. 2000 O
C. 800 O
D. 1600 O

The disadvantage of voltage divider bias is that it has _________________?

A. Low base current
B. High stability factor
C. Many resistors
D. None of the above

For proper amplification by a transistor circuit, the operating point should be located at the_____________ of the d.c. load line?

A. The maximum current point
B. Middle
C. The end point
D. None of the above

Thermal runaway occurs when_________________?

A. Emitter is forward biased
B. Transistor is not biased
C. Collector is reverse biased
D. Junction capacitance is high

The operating point ________________ on the a.c. load line?

A. Also line
B. May or may not lie
C. Does not lie
D. Data insufficient

The operating point is also called the _______________?

A. Saturation point
B. Quiescent point
C. Cut off point
D. None of the above

For good stabilsation in voltage divider bias, the current I1 flowing through R1 and R2 should be equal to or greater than_____________?

A. 10 IB
B. 2 IB
C. 3 IB
D. 4 IB

The disadvantage of base resistor method of transistor biasing is that it_________________?

A. Provides high stability
B. Is sensitive to changes in ß
C. Is complicated
D. None of the above

An ideal value of stability factor is________________?

A. More than 200
B. 200
C. 100
D. 1

The leakage current in a silicon transistor is about_____________ the leakage current in a germanium transistor?

A. One tenth
B. One hundredth
C. One thousandth
D. One millionth

The biasing circuit has a stability factor of 50. If due to temperature change, ICBO changes by 1 µA, then IC will change by___________________?

A. 25 µA
B. 100 µA
C. 20 µA
D. 50 µA

If the maximum collector current due to signal alone is 3 mA, then zero signal collector current should be at least equal to___________________?

A. mA
B. 6 mA
C. 3 mA
D. 1 mA

The circuit that provides the best stabilization of operating point is___________________?

A. Collector feedback bias
B. Base resistor bias
C. Potential divider bias
D. None of the above

Transistor biasing is generally provided by a_______________?

A. Biasing circuit
B. Diode
C. Bias battery
D. None of the above

Transistor biasing is done to keep _____________in the circuit?

A. Proper direct current
B. The base current small
C. Proper alternating current
D. Collector current small

For faithful amplification by a transistor circuit, the value of VBE should_____________for a silicon transistor?

A. Be 0.01 V
B. Be zero
C. Not fall below 0.7 V
D. Be between 0 V and 0.1 V

The zero signal IC is generally ______________ mA in the initial stages of a transistor amplifier?

A. 3
B. 1
C. 4
D. More than 10

The point of intersection of d.c. and a.c. load lines represents __________________?

A. Operating point
B. Voltage gain
C. Current gain
D. None of the above

For faithful amplification by a transistor circuit, the value of VCE should______________for silicon transistor?

A. Not fall below 1 V
B. Be 0.2 V
C. Be zero
D. None of the above

Operating point represents__________________?

A. The magnitude of signal
B. Values of IC and VCE when signal is applied
C. Zero signal values of IC and VCE
D. None of the above

Transistor biasing represents ______________ conditions?

A. both a.c. and d.c
B. d.c
C. a.c
D. none of the above

For proper operation of the transistor, its collector should have___________________?

A. Very small size
B. Proper reverse bias
C. Proper forward bias
D. None of the above

If biasing is not done in an amplifier circuit, it results in________________?

A. Excessive collector bias
B. Unfaithful amplification
C. Decrease in the base current
D. None of the above

Transistor Biasing Mcqs – (Electrical Engineering) MCQs Latest For FPSC, PPSC, NTS, KPPSC, SPSC & Other Tests

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