Transistors Mcqs – (Electrical Engineering) MCQs Latest For FPSC, PPSC, NTS, KPPSC, SPSC & Other Tests

Transistors Mcqs – (Electrical Engineering) MCQs Latest For FPSC, PPSC, NTS, KPPSC, SPSC & Other Tests

Transistors Mcqs - (Electrical Engineering) MCQs Latest For FPSC, PPSC, NTS, KPPSC, SPSC & Other Tests
Transistors Mcqs

Transistors Mcqs “. Tab this page to check “Latest Transistors MCQs” for the preparation of competitive mcqs, FPSC mcqs, PPSC mcqs, SPSC mcqs, KPPSC mcqs, AJKPSC mcqs, BPSC mcqs, NTS mcqs, PTS mcqs, OTS mcqs, Atomic Energy mcqs, Pak Army mcqs, Pak Navy mcqs, CTS mcqs, ETEA mcqs and others. The most occurred mcqs of Transistors in past papers. Past papers of Transistors mcqs. Past papers of Transistors MCQs. Mcqs are the necessary part of any competitive / job related exams. The Transistors mcqs having specific numbers in any written test. It is therefore everyone have to learn / remember the related Transistors mcqs. The Important series of Transistors Mcqs are given below:

IC = [a / (1 – a )] IB +_____________?

A. ICEO
B. IC
C. ICBO
D. (1 – a ) IB

IC = ß IB +__________?

A. IC
B. ICBO
C. ICEO
D. aIE

The output impedance of a transistor connected in_____________arrangement is the highest?

A. common collector
B. common emitter
C. common base
D. none of the above

IC = aIE +____________?

A. ICEO
B. IB
C. ICBO
D. ßIB

In a pnp transistor, the current carriers are______________?

A. donor ions
B. acceptor ions
C. free electrons
D. holes

The collector of a transistor is____________doped?

A. lightly
B. moderately
C. heavily
D. none of the above

In a npn transistor,_____________are the minority carriers?

A. donor ions
B. holes
C. free electrons
D. acceptor ions

The input impedance of a transistor is___________?

A. very high
B. low
C. high
D. almost zero

The value of a of a transistor is_____________?

A. 1
B. less than 1
C. more than 1
D. none of the above

In a tansistor, IC = 100 mA and IE = 100.2 mA. The value of ß is____________?

A. 50
B. 100
C. about 1
D. 200

The relation between ß and a is______________?

A. ß = (1 – a ) / a
B. ß = 1 / (1 – a )
C. ß = a / (1 – a )
D. ß = a / (1 + a )

The phase difference between the input and output voltages in a common base arrangement is___________?

A. 90o
B. 180o
C. 270o
D. 0o

The leakage current in CE arrangement is____________that in CB arrangement?

A. more than
B. the same
C. less than
D. none of the above

If the value of a is 0.9, then value of ß is___________?

A. 0.9
B. 9
C. 900
D. 90

BC 147 transistor indicates that it is made of____________?

A. carbon
B. silicon
C. germanium
D. none of the above

As the temperature of a transistor goes up, the base-emitter resistance___________?

A. decreases
B. remains the same
C. increases
D. none of the above

The most commonly used transistor arrangement is____________arrangement?

A. common emitter
B. common collector
C. common base
D. none of the above

The output impedance of a transistor is____________?

A. high
B. low
C. zero
D. very low

The emitter of a transistor is___________doped?

A. moderately
B. heavily
C. lightly
D. none of the above

The base of a transistor is____________doped?

A. moderately
B. heavily
C. lightly
D. none of the above

At the base-emitter junctions of a transistor, one finds___________?

A. a wide depletion layer
B. a reverse bias
C. low resistance
D. none of the above

In a transistor if ß = 100 and collector current is 10 mA, then IE is___________?

A. 110 mA
B. 100.1 mA
C. 100 mA
D. none of the above

The phase difference between the input and output voltages of a transistor connected in common emitter arrangement is___________?

A. 90o
B. 180o
C. 0o
D. 270o

The phase difference between the input and output voltages of a transistor connected in common collector arrangement is_____________?

A. 900
B. 00
C. 1800
D. 2700

The arrow in the symbol of a transistor indicates the direction of____________?

A. electron current in the collector
B. electron current in the emitter
C. hole current in the emitter
D. donor ion current

The most commonly used semiconductor in the manufacture of a transistor is_____________?

A. carbon
B. silicon
C. germanium
D. none of the above

The collector-base junction in a transistor has___________?

A. low resistance
B. reverse bias at all times
C. forward bias at all times
D. none of the above

A heat sink is generally used with a transistor to______________?

A. decrease the forward current
B. increase the forward current
C. compensate for excessive doping
D. prevent excessive temperature rise

In a transistor, signal is transferred from a___________circuit?

A. high resistance to high resistance
B. low resistance to high resistance
C. high resistance to low resistance
D. low resistance to low resistance

A transistor is connected in CB mode. If it is not connected in CE mode with same bias voltages, the values of IE, IB and IC will____________?

A. remain the same
B. decrease
C. increase
D. none of the above

IC = [a / (1 – a )] IB + [___________ / (1 – a )?

A. ICBO
B. IC
C. ICEO
D. IE

The voltage gain of a transistor connected in common collector arrangement is____________?

A. more than 10
B. equal to 1
C. more than 100
D. less than 1

The voltage gain in a transistor connected in___________arrangement is the highest?

A. common collector
B. common base
C. common emitter
D. none of the above

The power gain in a transistor connected in___________arrangement is the highest?

A. common emitter
B. common collector
C. common base
D. none of the above

The input impedance of a transistor connected in___________arrangement is the highest?

A. common base
B. common collector
C. common emitter
D. none of the above

The value of ß for a transistor is generally____________?

A. less than 1
B. 1
C. between 20 and 500
D. above 500

In a transistor ______________?

A. IB = IC + IE
B. IC = IE + IB
C. IE = IC – IB
D. IE = IC + IB

Most of the majority carriers from the emitter____________?

A. recombine in the emitter
B. recombine in the base
C. pass through the base region to the collector
D. none of the above

In a transistor, the base current is about_________of emitter current?

A. 20%
B. 25%
C. 35 %
D. 5%

A transistor is a___________operated device?

A. current
B. both voltage and current
C. voltage
D. none of the above

A transistor has____________?

A. three pn junctions
B. two pn junctions
C. one pn junction
D. four pn junctions

The element that has the biggest size in a transistor is____________?

A. collector
B. emitter
C. base
D. collector-base-junction

Transistors Mcqs – (Electrical Engineering) MCQs Latest For FPSC, PPSC, NTS, KPPSC, SPSC & Other Tests

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