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Digital Circuits MCQs – Memory Devices MCQs ( Digital Circuits ) MCQs
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Introduction of Memory Devices – 1
1. Memory is a/an ___________
a) Device to collect data from other computer
b) Block of data to keep data separately
c) Indispensable part of computer
d) Device to connect through all over the world
Answer: c
Explanation: Memory is an indispensable unit of a computer and microprocessor based systems which stores permanent or temporary data.
2. The instruction used in a program for executing them is stored in the __________
a) CPU
b) Control Unit
c) Memory
d) Microprocessor
Answer: c
Explanation: All of the program and the instructions are stored in the memory. The processor fetches it as and when required.
3. A flip flop stores __________
a) 10 bit of information
b) 1 bit of information
c) 2 bit of information
d) 3-bit information
Answer: b
Explanation: A flip-flop has capability to store 1 bit of information. It can be used further after erasing previous information.
4. A register is able to hold __________
a) Data
b) Word
c) Nibble
d) Both data and word
Answer: b
Explanation: Register is also a part of memory inside a computer. It stands there to hold a word. A word is a group of 16-bits or 2-bytes.
5. A register file holds __________
a) A large number of word of information
b) A small number of word of information
c) A large number of programs
d) A modest number of words of information
Answer: d
Explanation: A register file is different from a simple register because of capability to hold a modest number of words of information. A word is a group of 16-bits or 2-bytes.
6. The very first computer memory consisted of __________
a) A small display
b) A large memory storage equipment
c) An automatic keyboard input
d) An automatic mouse input
Answer: b
Explanation: The very first computer memory consisted of a minute magnetic toroid, which required large, bulky circuit boards stored in large cabinates.
7. A minute magnetic toroid is also called as __________
a) Large memory
b) Small memory
c) Core memory
d) Both small and large memory
Answer: c
Explanation: A minute magnetic toroid is also called as core memory which is made up of a semiconductor. A semiconductor is a device whose electrical conductivity lies between that of conductor and insulator.
8. Which one of the following has capability to store data in extremely high densities?
a) Register
b) Capacitor
c) Semiconductor
d) Flip-Flop
Answer: c
Explanation: Semiconductor has capability to store data in extremely high densities.
9. A large memory is compressed into a small one by using __________
a) LSI semiconductor
b) VLSI semiconductor
c) CDR semiconductor
d) SSI semiconductor
Answer: b
Explanation: VLSI (Very Large Scale Integration) semiconductor is used in modern computers to short the size of memory.
10. VLSI chip utilizes __________
a) NMOS
b) CMOS
c) BJT
d) All of the Mentioned
Answer: d
Explanation: VLSI (Very Large Scale Integration) is a memory chip which is made up of NMOS, CMOS, BJT, and BiCMOS. It can include 10,000 to 100,000 gates per IC.
11. CD-ROM refers to __________
a) Floppy disk
b) Compact Disk-Read Only Memory
c) Compressed Disk-Read Only Memory
d) Compressed Disk- Random Access Memory
Answer: b
Explanation: CD-ROM refers to Compact Disk-Read Only Memory.
12. Data stored in an electronic memory cell can be accessed at random and on demand using __________
a) Memory addressing
b) Direct addressing
c) Indirect addressing
d) Control Unit
Answer: b
Explanation: Direct addressing eliminates the need to process a large stream of irrelevant data in order to the desired data word.
13. The full form of PLD is __________
a) Programmable Large Device
b) Programmable Long Device
c) Programmable Logic Device
d) Programmable Lengthy Device
Answer: c
Explanation: The full form of PLD is Programmable Logic Device.
14. The evolution of PLD began with __________
a) EROM
b) RAM
c) PROM
d) EEPROM
Answer: a
Explanation: The evolution of PLD (Programmable Logic Device) began with Programmable Read Only Memory (i.e. PROM). Here, the ROM can be externally programmed as per the user.
15. A ROM is defined as __________
a) Read Out Memory
b) Read Once Memory
c) Read Only Memory
d) Read One Memory
Answer: c
Explanation: A ROM is defined as Read Only Memory which can read the instruction stored in a computer.
Introduction of Memory Devices – 2
1. The full form of ROM is __________
a) Read Outside Memory
b) Read Out Memory
c) Read Only Memory
d) Read One Memory
Answer: c
Explanation: The full form of ROM is Read Only Memory.
2. ROM consist of __________
a) NOR and OR arrays
b) NAND and NOR arrays
c) NAND and OR arrays
d) NOR and AND arrays
Answer: c
Explanation: ROM consists of NAND and OR arrays which can be programmed by the user to implement combinational & sequential functions. Combinational Operations like that of adders and subtractors and Sequential Functions like that of storing in the memory.
3. For reprogrammability, PLDs use __________
a) PROM
b) EPROM
c) CDROM
d) PLA
Answer: b
Explanation: For reprogrammability, PLDs use EPROM (i.e. Erasable PROM). It erases the previous program and starts uploading a new one. However, data is erased by exposing it to UV-light, which is a tedious and time-consuming process.
4. The full form of PROM is __________
a) Previous Read Only Memory
b) Programmable Read Out Memory
c) Programmable Read Only Memory
d) Previous Read Out Memory
Answer: c
Explanation: The full form of PROM is Programmable Read Only Memory, where the ROM can be programmed by the user.
5. The full form of EPROM is __________
a) Easy Programmable Read Only Memory
b) Erasable Programmable Read Only Memory
c) Eradicate Programmable Read Only Memory
d) Easy Programmable Read Out Memory
Answer: b
Explanation: The full form of EPROM is Erasable Programmable Read Only Memory, where the ROM can be erased and re-used by the user.
6. PLDs with programmable AND and fixed OR arrays are called __________
a) PAL
b) PLA
c) APL
d) PPL
Answer: a
Explanation: PLDs with programmable AND and fixed OR arrays are called PAL (i.e. Programmable Array Logic). However, PAL is less flexible but has higher speed.
7. When both the AND and OR are programmable, such PLDs are known as __________
a) PAL
b) PPL
c) PLA
d) APL
Answer: c
Explanation: When both the AND and OR are programmable, such PLDs are known as PLA (i.e. Programmable Logic Array). However, PLA is more flexible but has less speed.
8. ASIC stands for __________
a) Application Special Integrated Circuits
b) Applied Special Integrated Circuits
c) Application Specific Integrated Circuits
d) Applied Specific Integrated Circuits
Answer: c
Explanation: In digital electronics, ASIC stands for Application Specific Integrated Circuits. It is a customized integrated circuit which is produced for a specific use and not for a common-purpose.
9. The programmability and high density of PLDs make them useful in the design of __________
a) ISAC
b) ASIC
c) SACC
d) CISF
Answer: b
Explanation: The programmability and high density of PLDs make them useful in the design of ASIC (i.e. Application Specific Integrated Circuits) where design changes can be more rapidly and inexpensively.
10. FPGA stands for __________
a) Full Programmable Gate Array
b) Full Programmable Genuine Array
c) First Programmable Gate Array
d) Field Programmable Gate Array
Answer: d
Explanation: In digital electronics, FPGA stands for Field Programmable Gate Array. This type of integrated circuit is for general-purpose which is configured by the user as per their requirement.
11. Which of the following is a reprogrammable gate array?
a) EPROM
b) FPGA
c) Both EPROM and FPGA
d) ROM
Answer: c
Explanation: Both FPGA and EPROM are reprogrammable gate array.
12. The difference between FPGA and PLD is that __________
a) FPGA is slower than PLD
b) FPGA has high power dissipation
c) FPGA incorporates logic blocks
d) All of the Mentioned
Answer: c
Explanation: The difference between FPGA and PLD is that FPGA incorporates logic blocks instead of fixed AND-OR gates and is faster with low power dissipation. FPGAs are designed for having higher gate count whereas, PLDs are used for lesser gate counts.
Introduction of Memory Devices – 3
1. Memories are classified into _____ categories.
a) 3
b) 4
c) 5
d) 6
Answer: c
Explanation: Memory is typically classified of 2 types: Primary and Secondary. These are further classified into 5 types of memories and these are Secondary, RAM, Dynamic/Static, Volatile/Non-volatile, Magnetic/Semiconductor Memory.
2. Secondary memory is also known as ___________
a) Registers
b) Main Memory
c) RAM
d) Both registers and main memory
Answer: d
Explanation: Secondary memory is also known as Registers/Main Memory. In secondary memory, data is usually stored for a long-term.
3. In a computer, registers are present __________
a) Within control unit
b) Within RAM
c) Within ROM
d) Within CPU
Answer: d
Explanation: In a computer, registers are present within the CPU to store data temporarily during arithmetic and logical operations and during the functioning of the ALU.
4. Which of the following has the lowest access time?
a) RAM
b) ROM
c) Registers
d) Flag
Answer: c
Explanation: Registers has the lowest access time, as they are available inside the CPU. Registers are present within the CPU to store data temporarily during arithmetic and logical operations and during the functioning of the ALU.
5. Main memories of a computer, usually made up of __________
a) Registers
b) Semiconductors
c) Counters
d) PLDs
Answer: b
Explanation: Main memories of a computer, usually made up of semiconductors which are available external to the CPU to store program and data during execution of a program. Registers are present within the CPU to store data temporarily during arithmetic and logical operations and during the functioning of the ALU.
6. As the storage capacity of the main memory is inadequate, which memory is used to enhance it?
a) Secondary Memory
b) Auxiliary Memory
c) Static Memory
d) Both Secondary Memory and Auxiliary Memory
Answer: d
Explanation: As the storage capacity of the main memory is inadequate, Secondary memory is used to enhance it and it is also known as auxiliary memory. Secondary memory is also known as Registers/Main Memory. In secondary memory, data is usually stored for a long-term.
7. Which memories are if magnetic memory type?
a) Main Memory
b) Secondary Memory
c) Static Memory
d) Volatile Memory
Answer: b
Explanation: Usually, secondary memories are of magnetic memory type that are used to store large type quantities of data. In secondary memory, data is usually stored for a long-term.
8. Which of the following comes under secondary memory/ies?
a) Floppy disk
b) Magnetic drum
c) Hard disk
d) All of the Mentioned
Answer: d
Explanation: All of the mentioned equipments are of external storage which is known as secondary memories. In secondary memory, data is usually stored for a long-term.
9. Based on method of access, memory devices are classified into ____________ categories.
a) 2
b) 3
c) 4
d) 5
Answer: a
Explanation: Based on the method of access, memory devices are classified into two categories and these are sequential access memory and RAM. A sequential access memory is one in which a particular memory location is accessed sequentially.
10. A sequential access memory is one in which __________
a) A particular memory location is accessed rapidly
b) A particular memory location is accessed sequentially
c) A particular memory location is accessed serially
d) A particular memory location is accessed parallely
Answer: b
Explanation: A sequential access memory is one in which A particular memory location is accessed sequentially (i.e. the ith memory location is accessed only after sequencing through previous (i-1) memory locations).
11. An example of sequential access memory is __________
a) Floppy disk
b) Hard disk
c) Magnetic tape memory
d) RAM
Answer: c
Explanation: A sequential access memory is one in which a particular memory location is accessed sequentially. In magnetic tape memory, data is accessed sequentially.
12. A Random Access Memory is one in which __________
a) Any location can be accessed sequentially
b) Any location can be accessed randomly
c) Any location can be accessed serially
d) Any location can be accessed parallely
Answer: b
Explanation: A Random Access Memory is one in which any location can be accessed randomly.
13. An example of RAM is __________
a) Floppy disk
b) Hard disk
c) Magnetic tape memory
d) Semiconductor RAM
Answer: d
Explanation: A Random Access Memory is one in which any location can be accessed randomly. A semiconductor RAM is too much fast and can occupy any space in the memory location.
14. A static memory is one in which __________
a) Content changes with time
b) Content doesn’t changes with time
c) Memory is static always
d) Memory is dynamic always
Answer: d
Explanation: A static memory is one in which content doesn’t changes with time (i.e. stable). Dynamic memory is one in which content changes with time (i.e. unstable).
15. A dynamic memory is one in which __________
a) Content changes with time
b) Content doesn’t changes with time
c) Memory is static always
d) Memory is dynamic always
Answer: d
Explanation: A static memory is one in which content doesn’t change with time (i.e. stable). Dynamic memory is one in which content changes with time (i.e. unstable).
Introduction of Memory Devices – 4
1. Dynamic memory cells use _______________ as the storage device.
a) The reactance of a transistor
b) The impedance of a transistor
c) The capacitance of a transistor
d) The inductance of a transistor
Answer: c
Explanation: Capacitance of a transistor prevents from loss of information in a dynamic memory cell.
2. To store 1-bit of information, how many transistor is/are used ____________
a) 1
b) 2
c) 3
d) 4
Answer: a
Explanation: Only one bit transistor is needed to store 1-bit of information.
3. Static memory holds data as long as __________
a) AC power is applied
b) DC power is applied
c) Capacitor is fully charged
d) High Conductivity
Answer: b
Explanation: In any semiconductor equipment, AC power can’t be supplied directly. So, static memory holds the data as long as DC power is applied.
4. The example of dynamic memory is __________
a) CCD
b) Semiconductor dynamic RAM
c) Both CCD and semiconductor dynamic RAM
d) Floppy-Disk
Answer: c
Explanation: The examples of dynamic memories are CCD and semiconductor dynamic RAM because of the contents of both the memories changes with time.
5. In dynamic memory, CCD stands for __________
a) Charged Count Devices
b) Change Coupled Devices
c) Charge Coupled Devices
d) Charged Compact Disk
Answer: b
Explanation: In dynamic memory, CCD stands for Charge Coupled Devices.
6. Volatile memory refers to __________
a) The memory whose loosed data is achieved again when power to the memory circuit is removed
b) The memory which looses data when power to the memory circuit is removed
c) The memory which looses data when power to the memory circuit is applied
d) The memory whose loosed data is achieved again when power to the memory circuit is applied
Answer: b
Explanation: Volatile means ‘liable to change rapidly’ and volatile memory refers to the memory which looses data rapidly when power to the memory circuit is removed. Thus, it looks after it’s data as long as it is powered. Non-volatile means ‘not volatile’ and non-volatile memory refers to the memory which retains the data even if there is a break in the power supply.
7. Non-volatile memory refers to __________
a) The memory whose loosed data is retained again when power to the memory circuit is removed/applied
b) The memory which looses data when power to the memory circuit is removed
c) The memory which looses data when power to the memory circuit is applied
d) The memory whose loosed data is achieved again when power to the memory circuit is applied
Answer: a
Explanation: Volatile means ‘liable to change rapidly’ and volatile memory refers to the memory which looses data rapidly when power to the memory circuit is removed. Thus, it looks after it’s data as long as it is powered. Non-volatile means ‘not volatile’ and non-volatile memory refers to the memory which retains the data even if there is a break in the power supply.
8. The example of non-volatile memory device is __________
a) Magnetic Core Memory
b) Read Only Memory
c) Random Access Memory
d) Both Magnetic Core Memory and Read Only Memory
Answer: d
Explanation: Non-volatile means ‘not volatile’ and non-volatile memory refers to the memory which retains the data even if there is a break in the power supply. The examples of non-volatile memory devices are Magnetic Core Memory & ROM because both have capability to retain the data.
9. Based on material used for construction, memory devices are classifieds into ________ categories.
a) 2
b) 3
c) 4
d) 5
Answer: a
Explanation: Based on material used for construction, memory devices are classifieds into two categories, viz., Magnetic and Semiconductor memory. Magnetic recording is the process of storing data magnetically. Hard disk, floppy disk, magnetic tape are examples of magnetic recording process.
10. Magnetic recording is the process of __________
a) Storing data symmetrically
b) Storing data sequentially
c) Storing data magnetically
d) Both storing data symmetrically and
Answer: c
Explanation: Based on material used for construction, memory devices are classifieds into two categories, viz., Magnetic and Semiconductor memory. Magnetic recording is the process of storing data magnetically. Hard disk, floppy disk, magnetic tape are examples of the magnetic recording process.
11. Magnetic drum is a storage medium using __________
a) The surface of a jumping magnetic drum
b) The surface of a rotating magnetic drum
c) The surface of a stopped magnetic drum
d) The surface of a moving magnetic drum
Answer: b
Explanation: Magnetic drum is a storage medium using the surface of a rotating magnetic drum which have tendency to hold the data.
12. Magnetic core is the digital memory in which data is stored magnetically in individual cores operated by __________
a) Up and down select wires
b) Row and column select wires
c) Serial and parallel select wires
d) Up and Serial select wires
Answer: b
Explanation: Magnetic core is the digital memory in which data is stored magnetically in individual cores operated by row and column select wires, with data obtained from sense wire.
13. By which technology, semiconductor memories are constructed?
a) PLD
b) LSI
c) VLSI
d) Both LSI and VLSI
Answer: d
Explanation: Generally, semiconductor memories are constructed using Large Scale Integration (LSI) or Very Large Scale Integration (VLSI) because these are made up of NMOS, CMOS, BJT, etc.
Introduction of Memory Devices – 5
1. When two or more devices try to write data in a bus simultaneously, is known as ______________
a) Bus collisions
b) Address multiplexing
c) Address decoding
d) Bus contention
Answer: d
Explanation: Bus contention is an undesirable state of the bus of a computer, in which more than one memory mapped device or the CPU is attempting to place output values onto the bus at once.
2. A memory is a collection of ____________
a) Unit cells
b) Storage cells
c) Data cells
d) Binary cells
Answer: b
Explanation: A memory is a collection of storage cells with associated circuits needed to transfer information.
3. To transfer the information from input to output and vice versa, the cells used are ____________
a) Storage cells
b) Data cells
c) Unit cells
d) Both data and unit cells
Answer: a
Explanation: To transfer the information from input to output and vice versa, the cells used are called storage cells. The storage cells stores data in the form of binary information.
4. The data stored in a group of bits is called ____________
a) Nibble
b) Word
c) Byte
d) Address
Answer: b
Explanation: The data stored in a group of bits is called word. Usually, a word is a group of 16-bits or 2-bytes.
5. Each word consist of a sequence of ____________
a) Letters
b) Binary numbers
c) Hexadecimal numbers
d) Gray codes
Answer: b
Explanation: Each word consists of a sequence of 0s and 1s (i.e. binary numbers). Usually, a word is a group of 16-bits or 2-bytes.
6. Each word stored in a memory location is represented by ____________
a) RAM
b) ROM
c) Storage class
d) Address
Answer: d
Explanation: Each word stored in a memory location is represented by address. Usually, a word is a group of 16-bits or 2-bytes.
7. The group of each 8-bit is called ____________
a) Nibble
b) Flag
c) Byte
d) Word
Answer: c
Explanation: 1 byte = 8-bit, 4-bits = 1 nibble and 16-bits = 1 word.
8. The capacity of a memory unit is ____________
a) The number of binary input stored
b) The number of words stored
c) The number of bytes stored
d) All of the Mentioned
Answer: c
Explanation: The total number of bytes that can be stored, is the maximum capacity of a memory unit. However, memory unit is the smallest unit of a processor.
9. The communication between memory and its environment is achieved through ____________
a) Control lines
b) Data input/output lines
c) Address selection lines
d) All of the Mentioned
Answer: d
Explanation: Firstly, the data input is needed to transfer the information and it is passed through the address lines and then controlled by control lines. The control lines are responsible for the timing and control of the signals sent and received.
10. One of the most important specifications on magnetic media is the ____________
a) Polarity reversal rate
b) Tracks per inch
c) Data transfer rate
d) Rotation speed
Answer: c
Explanation: The rate of data transfer depends on the properties of magnetic media.
Read Only Memory (ROM) – 1
1. Which of the following has the capability to store the information permanently?
a) RAM
b) ROM
c) Storage cells
d) Both RAM and ROM
Answer: b
Explanation: ROM (Read Only Memory) has the capability to store the information permanently. RAM provides random access to memory. Storage cells are responsible for the transfer of data from and into the memory.
2. ROM has the capability to perform _____________
a) Write operation only
b) Read operation only
c) Both write and read operation
d) Erase operation
Answer: b
Explanation: ROM means “Read Only Memory”. Hence, it has the capability to perform read operation only. No write or erase operation could be performed in the ROM.
3. Since, ROM has the capability to read the information only then also it has been designed, why?
a) For controlling purpose
b) For loading purpose
c) For booting purpose
d) For erasing purpose
Answer: c
Explanation: ROM means “Read Only Memory”. Hence, it has capability to perform read operation only. No write or erase operation could be performed in the ROM. It has designed to provide the computer with resident programmes and for booting purpose.
4. The ROM is a ___________
a) Sequential circuit
b) Combinational circuit
c) Magnetic circuit
d) Static circuit
Answer: b
Explanation: ROM is a combination of different ICs. So, it is a combinational circuit. It depends on present input and not past states.
5. ROM is made up of ___________
a) NAND and OR gates
b) NOR and decoder
c) Decoder and OR gates
d) NAND and decoder
Answer: c
Explanation: ROM (Read Only Memory) has the capability to store the information permanently. ROM is made up of decoder and OR gates within a single IC package.
6. Why are ROMs called non-volatile memory?
a) They lose memory when power is removed
b) They do not lose memory when power is removed
c) They lose memory when power is supplied
d) They do not lose memory when power is supplied
Answer: b
Explanation: Volatile memory stores data as long as it is powered. ROMs are called non-volatile memory because of they do not lose memory when power is removed.
7. In ROM, each bit is a combination of the address variables is called ___________
a) Memory unit
b) Storage class
c) Data word
d) Address
Answer: d
Explanation: In ROM, each bit combination that comes out of the output lines is called data word. Usually, a word consists of 16-bits or 2-bytes.
8. Which is not a removable drive?
a) Zip
b) Hard disk
c) Super Disk
d) Jaz
Answer: c
Explanation: Hard disk is present inside a computer. So, it is not a removable drive.
9. In ROM, each bit combination that comes out of the output lines is called ___________
a) Memory unit
b) Storage class
c) Data word
d) Address
Answer: c
Explanation: In ROM, each bit combination that comes out of the output lines is called data word. Usually, a word consists of 16-bits or 2-bytes.
10. VLSI chip utilizes ___________
a) NMOS
b) CMOS
c) BJT
d) All of the Mentioned
Answer: d
Explanation: Very Large Scale Integration (VLSI) (ranging from 10,000 to 100,000 gates per IC) is a memory chip which is made up of NMOS, CMOS, BJT, and BiCMOS.
Read Only Memory (ROM) – 2
1. The MOS technology based semiconductor ROMs are classified into _____ categories.
a) 2
b) 3
c) 4
d) 5
Answer: b
Explanation: The MOS technology based semiconductor ROMs are classified into three categories: Mask ROM, PROM,& EPROM. PROM stands for Programmable Read Only Memory in which the ROM can be externally programmed by the user. EPROM stands for Erasable Programmable Read Only Memory, where the ROM and be cleared and re-programmed.
2. MOS ROM is constructed using __________
a) FETs
b) Transistors
c) MOSFETs
d) BJTs
Answer: c
Explanation: MOS ROM is made up of MOSFETs. MOSFETs are Metal Oxide Semiconductor Field Effect Transistors.
3. The full form of EEPROM is __________
a) Erasable Electrically Programmable ROMs
b) Electrically Erasable Programmable ROMs
c) Electrically Erasable Programming ROMs
d) Electrically Erasable Programmed ROMs
Answer: b
Explanation: The full form of EEPROM is Electrically Erasable Programmable ROMs. In EPROM (Erasable Programmable ROMs), the ROM is cleared by exposing it to UV radiation and also it’s a tedious process. Whereas, in EEPROM, the ROM can be cleared electrically and thus is less time consuming and more efficient.
4. Which of the following best describes EPROMs?
a) EPROMs can be programmed only once
b) EPROMs can be erased by UV
c) EPROMs can be erased by shorting all inputs to the ground
d) EPROMs can be erased electrically
Answer: b
Explanation: EPROM (Erasable Programmable ROMs), the ROM is cleared by exposing it to UV radiation and also it’s a tedious process. Whereas, in EEPROM, the ROM can be cleared electrically and thus is less time consuming and more efficient.
5. The Width of a processor’s data path is measured in bits. Which of the following are common data paths?
a) 8 bits
b) 12 bits
c) 16 bits
d) 32 bits
Answer: a
Explanation: In generalised form, the data paths are of 8 bits. The data path, also known as data bus, is the channel through which the processor sends and receives data.
6. What type of memory is not directly addressable by the CPU and requires special software called EMS (expanded memory specification)?
a) Extended
b) Expanded
c) Base
d) Conventional
Answer: b
Explanation: Expanded memory is not directly addressable by the CPU. Expanded memory is the additional memory which is incorporated beyond the parent memory limit of the processor.
7. Which bus is used for input and output in case of microprocessor operation?
a) Address bus
b) System bus
c) Control bus
d) Data bus
Answer: c
Explanation: The input and output are used to control the function of a microprocessor. Hence, the control bus is used to transfer the input and output signal from microprocessor to external peripherals and or from external peripherals to microprocessor.
8. What is the major difference between DRAM and SRAM?
a) Dynamic RAMs are always active; static RAMs must reset between data read/write cycles
b) SRAMs can hold data via a static charge, even with power off
c) The only difference is the terminal from which the data is removed—from the FET Drain or Source
d) DRAMs must be periodically refreshed
Answer: d
Explanation: DRAMs must be periodically refreshed so that it can store the new information. DRAMs are slower compared to SRAMs as the access time for SRAM is less than that of DRAM.
9. Which of the following is not a part of Hard disk?
a) Platter
b) Read/Write
c) Valve
d) Spindle
Answer: c
Explanation: A valve is a device that regulates, directs or controls the flow of a fluid (gases, liquids, fluidized solids, or slurries) by opening, closing, or partially obstructing various passageways. So, it is not a part of hard disk.
10. Which ROM can be erased by an electrical signal?
a) ROM
b) Mask ROM
c) EPROM
d) EEPROM
Answer: d
Explanation: In EPROM (Erasable Programmable ROMs), the ROM is cleared by exposing it to UV radiation and also it’s a tedious process. Whereas, in EEPROM, the ROM can be cleared electrically and thus is less time consuming and more efficient.
11. In the floppy drive, data is written to and read from the disk via a magnetic _____ head mechanism.
a) Cluster
b) Read/Write
c) Cylinder
d) Recordable
Answer: b
Explanation: A floppy disk is a removable disk used for storing data via magnetic facilities. In the floppy drive, data is written to and read from the disk via a magnetic read/write head mechanism.
12. What does the term “random access” mean in terms of memory?
a) Any address can be accessed in systematic order
b) Any address can be accessed in any order
c) Addresses must be accessed in a specific order
d) Any address can be accessed in reverse order
Answer: b
Explanation: “Random access” mean which can be accessed randomly and in other words any address can be accessed in any order.
13. Which type of ROM has to be custom built by the factory?
a) EEPROM
b) Mask ROM
c) EPROM
d) PROM
Answer: b
Explanation: All types of ROM are programmable and can be programmed as per requirement but the mask ROM is always programmed for specific application and it can’t be reprogrammed. PROM stands for Programmable Read Only Memory in which the ROM can be externally programmed by the user. EPROM stands for Erasable Programmable Read Only Memory, where the ROM and be cleared and re-programmed.
14. The computer’s main memory is __________
a) Hard drive and RAM
b) CD-ROM and hard drive
c) RAM and ROM
d) CMOS and hard drive
Answer: c
Explanation: The computer’s main memory is RAM and ROM because all the storage related operation are performed by the data present in RAM/ROM. RAM stands for Random Access Memory where any address can accessed in any order. ROM stands for Read Only Memory wherefrom data can only be read.
15. A major disadvantage of the mask ROM is that ____________
a) It is time consuming to change the stored data when system requirements change
b) It is very expensive to change the stored data when system requirements change
c) It cannot be reprogrammed if stored data needs to be changed
d) It has an extremely short life expectancy and requires frequent replacement
Answer: c
Explanation: A major disadvantage of the mask ROM is that it cannot be reprogrammed if stored data needs to be changed. PROM stands for Programmable Read Only Memory in which the ROM can be externally programmed by the user. EPROM stands for Erasable Programmable Read Only Memory, where the ROM and be cleared and re-programmed.
Read Only Memory (ROM) – 3
1. ROM may be programmed in _____ ways.
a) 2
b) 3
c) 4
d) 5
Answer: a
Explanation: ROM may be programmed in two different ways: (i) Mask Programming & (ii) PROM. Mask Programming is done by the manufacture. Whereas, PROM(Programmable ROM) is programmed by the user.
2. Which programming is done during the manufacturing process?
a) Mask Programming
b) PROM
c) Both PROM and mask programming
d) EPROM
Answer: a
Explanation: Mask ROM is permanently programmed during the manufacturing process. Whereas, PROM(Programmable ROM) is programmed by the user.
3. A photographic negative is called a ____________
a) Photo
b) Negative
c) Mask
d) Virtual image
Answer: c
Explanation: A photographic negative is called a mask is used to control the electrical connections on the chip.
4. Mask programming is also known as __________
a) EPROM
b) PROM
c) Custom programming
d) Both PROM and EPROM
Answer: c
Explanation: Mask programming is also known as custom programming. Mask ROM is permanently programmed during the manufacturing process. Whereas, PROM(Programmable ROM) is programmed by the user.
5. The total storage capacity of 16 * 8 ROM is __________
a) 8 bits
b) 16 bits
c) 128 bits
d) 64 bits
Answer: c
Explanation: ROM stands for Read Only Memory in which data is stored permanently and wherefrom data can only be read and rarely modified. The total storage capacity of 16 * 8 ROM is 128 bits (i.e. 16 * 8 = 128).
6. Which IC is a typical MSI/TTL based?
a) IC 74187
b) IC 74189
c) IC 74188
d) IC 74186
Answer: a
Explanation: MSI/TTL stands for Medium Scale Integration of Transistor-Transistor Logic. IC 74187 is a typical MSI/TTL based.
7. IC 74187 is of __________
a) 512 bits
b) 1024 bits
c) 256 bits
d) 68 bits
Answer: b
Explanation: IC 74187 is of 1024 bits because it is organised as 256 * 4. Thus, it has 256 rows and 4 columns.
8. How many rows and columns are present in IC 74187?
a) 128, 3
b) 128, 4
c) 256, 3
d) 256, 4
Answer: d
Explanation: IC 74187 is organised as 256 * 4, hence it has 256 rows and 4 columns.
IC 74187 is of 1024 bits because it is organized as 256 * 4.
9. Which of the following IC is of 256 bit?
a) IC 74187
b) IC 74189
c) IC 74188
d) IC 74186
Answer: c
Explanation: IC 74188 is of 256 bits. Since, it is organised as 32 * 8 = 256. Thus, it has 32 rows and 8 columns.
10. Which IC is known as bipolar ROM?
a) IC 74187
b) IC 74189
c) IC 74188
d) IC 74186
Answer: c
Explanation: IC 74188 is known as bipolar ROM since it is made up of TTL logic.
11. How many address location a bipolar ROM has?
a) 16
b) 32
c) 64
d) 8
Answer: b
Explanation: Bipolar ROM means IC 74188 and it is organized as 32 * 8. Thus, it has 32 rows and 8 columns. So, it has 32 address locations and each of which has 8 bits of storage.
12. Which of the following is known as MOS static ROM?
a) TMS 45276
b) TMS 45278
c) TMS 45279
d) TMS 45275
Answer: a
Explanation: TMS 45276 is known as MOS static ROM and it is made up of MOSFETs.
13. TMS 45276 is of __________
a) 32 KB
b) 56 KB
c) 8 bits
d) 4 bytes
Answer: a
Explanation: TMS 45276 is known as MOS static ROM and it is made up of MOSFETs. In ROM, the data remains even when the power is switched off. TMS 45276 is of 32 KB.
14. Which of the following has the capability to store the highest bits of data?
a) TMS 45276
b) IC 74188
c) IC 74187
d) IC 74185
Answer: a
Explanation: TMS 45276 has the capability to store the highest bits of data because of 32768 * 8 = 12,62,144 organization.
15. What does CS mean in a chip?
a) Storing Capacity
b) Custom Select
c) Chip Select
d) Custom Storage
Answer: c
Explanation: CS means chip select and with the help of CS a chip is activated/deactivated. It is used for enabling or disabling the function of the chip.
16. ROMs are used to __________
a) Store bootstrap program
b) Character generation
c) Code conversion
d) All of the Mentioned
Answer: d
Explanation: ROM stands for Read Only Memory in which data is permanently stored, even when the power is turned off. It is used to store bootstrap program, character generation and code conversion.
Programmable Read Only Memory – 1
1. The time from the beginning of a read cycle to the end of tACS/tAA is called as ____________
a) Write enable time
b) Data hold
c) Read cycle time
d) Access time
Answer: d
Explanation: The time from the beginning of a read cycle to the end of tACS/tAA is called as access time. It is the time in which data is fetched from the storage.
2. Why did PROM introduced?
a) To increase the storage capacity
b) To increase the address locations
c) To provide flexibility
d) To reduce the size
Answer: c
Explanation: In order to provide some flexibility in the possible applications of ROM, PROM is introduced. PROM stands for Programmable ROM, in which the ROM is programmed by the user.
3. Which of the following is programmed electrically by the user?
a) ROM
b) EPROM
c) PROM
d) EEPROM
Answer: c
Explanation: Programmable ROMs can be programmed electrically by the user but can’t be reprogrammed. EEPROMs can be electrically erased and re-programmed by the user.
4. PROMs are available in ___________
a) Bipolar and MOSFET technologies
b) MOSFET and FET technologies
c) FET and bipolar technologies
d) MOS and bipolar technologies
Answer: d
Explanation: PROMs (Programmable ROMs) can be programmed electrically by the user but can’t be reprogrammed. PROMs are available in both bipolar and MOS (Metal Oxide Semiconductor) technologies.
5. The bit capacity of a memory that has 2048 addresses and can store 8 bits at each address is ___________
a) 4096
b) 16384
c) 32768
d) 8129
Answer: b
Explanation: 1 address can store 8 bits. Therefore, total capacity of a memory having n addresses = 8 * n.
Therefore, for 2048 addresses,
total capacity of a memory = 2048 * 8 = 16384 bits.
6. How many 8 k × 1 RAMs are required to achieve a memory with a word capacity of 8 k and a word length of eight bits?
a) Eight
b) Two
c) One
d) Four
Answer: a
Explanation: RAM stands for Random Access Memory in which any memory address can be accessed in any order. It requires word of length 8 bits. So, one word needs of 1 bit and 8 bit requires 8 bits.
7. Which of the following best describes the fusible-link PROM?
a) Manufacturer-programmable, reprogrammable
b) Manufacturer-programmable, one-time programmable
c) User-programmable, reprogrammable
d) User-programmable, one-time programmable
Answer: d
Explanation: The fusible-link PROM is user programmable and one time programmable. It means that a written program can not be reprogrammed. EPROMs can be erased and re-programmed.
8. How can ultraviolet erasable PROMs be recognized?
a) There is a small window on the chip
b) They will have a small violet dot next to the #1 pin
c) Their part number always starts with a “U”, such as in U12
d) They are not readily identifiable, since they must always be kept under a small cover
Answer: a
Explanation: An ultraviolet erasable PROMs have small window on the chip with black marked. Such type of PROMS are called EPROMS which are cleared by exposing it to UV radiation. They are re-programmable.
9. Which part of a Flash memory architecture manages all chip functions?
a) Program verify code
b) Floating-gate MOSFET
c) Command code
d) Input/Output pins
Answer: b
Explanation: MOSFET technology is the best one in the manufacturing of chip because it has high flexibility and storage capacity. Thus, Floating-Gate MOSFET part of a Flash Memory architecture manages all chip functions.
10. How much locations an 8-bit address code can select in memory?
a) 8 locations
b) 256 locations
c) 65,536 locations
d) 131,072 locations
Answer: b
Explanation: An 8 bit address code requires 32 memory locations and it can hold maximum upto 32 * 8 = 256 locations = 28.
11. What is a fusing process?
a) It is a process by which data is passed to the memory
b) It is a process by which data is read through the memory
c) It is a process by which programs are burnout to the diode/transistors
d) It is a process by which data is fetched through the memory
Answer: c
Explanation: Fusing is a process by which programs are burnout to the diode/transistors and it can not be reprogrammed if any error occurs.
12. Fusing process is ___________
a) Reversible
b) Irreversible
c) Synchronous
d) Asynchronous
Answer: b
Explanation: Since, any program cannot be reprogrammed in a PROM, so this process is irreversible as PROMs are programmed using the Fusing process. Fusing is a process by which programs are burnout to the diode/transistors and it can not be reprogrammed if any error occurs.
13. The cell type used inside a PROM is ___________
a) Link cells
b) Metal cells
c) Fuse cells
d) Electric cells
Answer: c
Explanation: The cell type used inside a PROM is fuse cells by which a program is burnout. Fusing is a process by which programs are burnout to the diode/transistors and it can not be reprogrammed if any error occurs.
14. How many types of fuse technologies are used in PROMs?
a) 2
b) 3
c) 4
d) 5
Answer: b
Explanation: Fusing is a process by which programs are burnout to the diode/transistors and it can not be reprogrammed if any error occurs. Three types of fuse technologies are used in PROMs and these are: (i) Metal links, (ii) Silicon links, & (iii) p-n junctions.
15. Metal links are made up of ___________
a) Polycrystalline
b) Magnesium sulphide
c) Nichrome
d) Silicon dioxide
Answer: c
Explanation: Metal links are made up of Nichrome materials.
Programmable Read Only Memory – 2
1. Silicon links are made up of _____________
a) Polycrystalline silicon
b) Polycrystalline magnesium
c) Nichrome
d) Silicon dioxide
Answer: a
Explanation: Metal links are made up of Nichrome materials. Silicon links are made up of polycrystalline silicon.
2. During programming p-n junction is _____________
a) Avalanche reverse biased
b) Avalanche forward biased
c) Zener reverse biased
d) Zener reverse biased
Answer: a
Explanation: The sudden heavy flow of electrons in the reverse direction and heat cause aluminium ions to migrate. So, during programming p-n junction is avalanche reversed biased.
3. The full form of FAMOS is _____________
a) Floating Gate Avalanche Injection MOS
b) Float Gate Avalanche Injection MOS
c) Floating Gate Avalanche Induction MOS
d) Float Gate Avalanche Induction MOS
Answer: a
Explanation: The full form of FAMOS is Floating Gate Avalanche Injection MOS. It is a floating gate transistor in which the trapped electrons is responsible for the dropping of the voltage.
4. PROM is programmed by _____________
a) EPROM programmer
b) EEPROM programmer
c) PROM programmer
d) ROM programmer
Answer: c
Explanation: PROM is programmed by plugging it into a special device called PROM programmer. The ROM cannot be clear and hence PROM is a one-time programmable device.
5. The PROM starts out with _____________
a) 1s
b) 0s
c) Null
d) Both 1s and 0s
Answer: b
Explanation: PROM is a one-time programmable device, which is programmed by the user. The PROM starts out with all 0s. These current pulses blow the fuse links, thus creating the desire pattern.
6. For the implementation of PROM, which IC is used?
a) IC 74187
b) IC 74186
c) IC 74185
d) IC 74184
Answer: b
Explanation: For implementation of PROM, IC 74186 is used. IC 74186 is of 512 bits (62 * 8 = 512). Thus, it has 62 rows and 8 columns.
7. IC 74186 is of ______________
a) 1024 bits
b) 32 bits
c) 512 bits
d) 64 bits
Answer: c
Explanation: IC 74186 is of 512 bits (62 * 8 = 512). Thus, it has 62 rows and 8 columns.
8. How many memory locations are addressed using 18 address bits?
a) 165,667
b) 245,784
c) 262,144
d) 212,342
Answer: c
Explanation: For n address bits, the memory location will consist of 2n bits. Using 18 address bits, 218 = 262,144 (= 256 K) words are addressed.
9. How many address bits are needed to operate a 2K * 8-bit memory?
a) 10
b) 11
c) 12
d) 13
Answer: b
Explanation: For n address bits, the memory location will consist of 2n bits. Thus, for 2K, only 11 address bits are required, because 211 = 2K.
10. What is the bit storage capacity of a ROM with a 1024 × 8 organization?
a) 1024
b) 4096
c) 2048
d) 8192
Answer: d
Explanation: For n address bits, the memory location will consist of 2n bits. 1024 = 210. So, 210 * 23 = 1024 * 8 = 8192 bit.